Impact of nearby lightning on photovoltaic modules converters

Abstract

The lightning phenomenon is one of the main threats in photovoltaic (PV) applications. Suitable protection systems avoidmajor damages fromdirect strikes but also nearby strikesmay induce overvoltage transients in themodule itself and in the power conditioning circuitry, which can permanently damage the system. The effects on the PV system sensibly depend on the converter topology and on the adopted power switch. In the present study, a comparative analysis of the transient response due to a nearby lightning strike (LS) is carried out for three PV systems, each equipped with a different converter, namely, boost, buck and buck–boost, based on either silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFET) or insulated gate bipolar transistors controlled power switch devices, allowing in this way an analysis at different switching frequencies. The purpose of this paper is to present the results of the numerical analysis to help the design of suited protection systems.