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Expanding graphene properties by a simple S-doping methodology based on cold CS2 plasma

dc.contributor.authorAbdelkader-Fernández, Victor Karim
dc.contributor.authorDomingo-García, María
dc.contributor.authorLópez Garzón, Francisco Javier
dc.contributor.authorFernandes, Diana M.
dc.contributor.authorFreire, Cristina
dc.contributor.authorLópez de la Torre, Maria Dolores
dc.contributor.authorMelguizo, Manuel
dc.contributor.authorGodino-Salido, Maria Luz
dc.contributor.authorPérez-Mendoza, Manuel
dc.date.accessioned2024-02-07T00:20:20Z
dc.date.available2024-02-07T00:20:20Z
dc.date.issued2019-12-14
dc.description.abstractFor the first time, graphene has been successfully doped with sulfur via short exposition to CS2 microwave cold plasmas, avoiding high-temperature and time/chemicals-consuming treatments. Different S-doped samples were obtained by varying the duration of plasma treatments, reaching a remarkable 2.3 at % of S content after only 5 min of exposition. The S-doped graphenes present several sulfur containing moieties, among which thioether groups resulted to be predominant. These moieties are covalently bond to graphene layers and exhibit good thermal and water stability. In addition, unlike others more conventional methods, S-doping via CS2 plasmas do not damage the structural order of graphene. The influence of sulfur doping on the graphene properties has been assessed through two different tests: on one side, the capture of Pd2+ ions in aqueous solution, and on the other, the electrocatalytic activity towards the production of oxygen from water (OER process). In both cases, the performance of the pristine graphene was significantly enhanced with S-doping. In addition, the capture of Pd2+ allows the formation of sulfur-Pd nanoclusters supported on the graphene surface, which are very useful in electrochemical devices.es_ES
dc.description.sponsorshipThe financial support of the MINECO (projects MAT2014-60104- C2-1-R and MAT2014-60104-C2-2-R), FEDER program, Autonomous Regional Government (J. de Andalucía, grupo RNM342) and Programa de Fortalecimiento de la IþDþi from UGR is acknowledged. The technical assistance of Centre of Instrumental Facilities, STI, of the University of Jaen is also acknowledged. The work was also funded by Fundaç~ ao para a Ciencia e a Tecnologia de Portugal ^ (FCT)/MEC under FEDER under Program PT2020 - project UID/QUI/ 50006/2013-POCI/01/0145/FEDER/007265 and project “UniRCell”, with the reference POCI-01-0145-FEDER-016422. Víctor K. Abdelkader Fern andez thanks UniRCell project for the post-doctoral grant.es_ES
dc.identifier.citationCarbon[2019];[144]:269es_ES
dc.identifier.doihttps://doi.org/10.1016/j.carbon.2018.12.045
dc.identifier.other10.1016/j.carbon.2018.12.045es_ES
dc.identifier.urihttps://hdl.handle.net/10953/2102
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.relation.ispartofCarbones_ES
dc.rightsCC0 1.0 Universal*
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectGraphenees_ES
dc.subjectCS2 plasmaes_ES
dc.titleExpanding graphene properties by a simple S-doping methodology based on cold CS2 plasmaes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones_ES

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